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PD - 94337B
HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-2)
IRF7NA2907 75V, N-CHANNEL
Product Summary
Part Number
IRF7NA2907 BVDSS
75V
RDS(on) ID 0.0045 75A*
Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
SMD-2
Features:
n n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 75* 75* 300 250 2.0 20 500 75 25 6.4 -55 to 150 300 (for 5s) 3.3 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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1
02/18/02
IRF7NA2907
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
75 -- -- 2.0 130 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.08 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.0045 4.0 -- 20 250 100 -100 375 60 150 40 125 175 75 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 75A VDS = VGS, ID = 250A VDS =15V, IDS = 75A VDS = 75V ,VGS=0V VDS = 60V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 45A VDS = 60V VDD = 38V, ID = 45A, VGS = 10V, RG = 1.2
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD l Ciss C oss C rss
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH Measured from the center of drain pad to the center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
12000 2280 610
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 75* 300 0.95 175 850
Test Conditions
A
V ns nC Tj = 25C, IS = 75A, VGS = 0V Tj = 25C, IF = 45A, di/dt 100A/s VDD 25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 0.5
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page
2
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IRF7NA2907
1000
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
4.5V
100
4.5V
100
10 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
10 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 75A
I D , Drain-to-Source Current (A)
2.0
TJ = 150 C
1.5
100
TJ = 25 C
1.0
0.5
10 4.5
15
V DS = 25V 20s PULSE WIDTH 5.5 5.0 6.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7NA2907
20000
VGS , Gate-to-Source Voltage (V)
16000
VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 45A
16
VDS = 60V
C, Capacitance (pF)
Ciss
12000
12
8000
8
C oss
4000
C rss
4
0 1 10 100
0 0 100 200
FOR TEST CIRCUIT SEE FIGURE 13
300 400 500
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
100
TJ = 150 C
10
ID, Drain-to-Source Current (A)
100
100s 1ms
10 Tc = 25C Tj = 150C Single Pulse 1 0 1 10 100 1000 VDS , Drain-toSource Voltage (V)
TJ = 25 C
1
10ms
0.1 0.0
V GS = 0 V
0.5 1.0 1.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7NA2907
200
LIMITED BY PACKAGE
150
V DS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
-V DD
VGS
Pulse Width 1 s Duty Factor 0.1 %
100
50
Fig 10a. Switching Time Test Circuit
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01
0.1
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7NA2907
1000
EAS , Single Pulse Avalanche Energy (mJ)
15V
800
ID 33.5A 47.4A BOTTOM 75A TOP
VDS
L
D R IV E R
600
RG
VV 2 0GS
D .U .T
IA S tp
+ V - DD
A
400
0 .0 1
200
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
V (B R )D S S tp
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
10 V
QGS VG QGD
D.U.T. VGS
3mA
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRF7NA2907
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L= 0.17mH Peak IAS = 75A, VGS = 10V, RG= 25
ISD 45A, di/dt 260A/s,
VDD 75V, TJ 150C
Pulse width 300 s; Duty Cycle 2%
Case Outline and Dimensions -- SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02
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